CSD19537Q3

Texas Instruments

CSD19537Q3

Datasheet

Analog & Power

MOSFET N-CH 100V 9.7A/50A 8VSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.5mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 50 V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Ta)
Max Power Dissipation2.8W (Ta), 83W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-VSON-CLIP (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)