CSD18512Q5BT

Texas Instruments

CSD18512Q5BT

Datasheet

Analog & Power

MOSFET N-CH 40V 211A 8VSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.6mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7120 pF @ 20 V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C211A (Tc)
Max Power Dissipation139W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-VSON-CLIP (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)