CSD17579Q5AT

Texas Instruments

CSD17579Q5AT

Datasheet

Analog & Power

MOSFET N-CH 30V 25A 8VSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.7mOhm @ 8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1030 pF @ 15 V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Max Power Dissipation3.1W (Ta), 36W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-VSONP (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)