Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 10mOhm @ 10A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 12.5 V |
| Manufacturer | Texas Instruments |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | NexFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +16V, -12V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Drain-to-Source Voltage | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Max Power Dissipation | 35W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|