CSD13303W1015

Texas Instruments

CSD13303W1015

Datasheet

Analog & Power

MOSFET N-CH 12V 31A 6DSBGA

Active6-UFBGA, DSBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 1.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds715 pF @ 6 V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Max Power Dissipation1.65W (Ta)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)