UGS20JH

Taiwan Semiconductor Corporation

UGS20JH

Datasheet

Analog & Power

DIODE GEN PURP 600V 20A TO263AB

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F94.5pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)50 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2 V @ 20 A
Current - Average Rectified (Io)20A
Current - Reverse Leakage @ Vr1 µA @ 600 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackageTO-263AB (D2PAK)

Environmental

GradeAutomotive
Operating Temperature - Junction-55°C ~ 150°C
QualificationAEC-Q101