Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.8A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 685 pF @ 100 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Through Hole |
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 800 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Max Power Dissipation | 110W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-262-3 Short Leads, I²Pak |
| Supplier Device Package | TO-262S (I2PAK) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|