Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 1.8A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1124 pF @ 50 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Through Hole |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Max Power Dissipation | 50W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package | ITO-220 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|