TSM680P06DPQ56 RLG

Taiwan Semiconductor Corporation

TSM680P06DPQ56 RLG

Datasheet

Analog & Power

MOSFET 2P-CH 60V 12A 8DFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs68mOhm @ 6A, 10V
Base Product NumberTSM680
Configuration2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs16.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 30V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Power - Max3.5W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)