Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1829 pF @ 75 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 150 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 24A (Tc) |
| Max Power Dissipation | 2.6W (Ta), 96W (Tc) |
| Package / Case | 8-PowerTDFN |
|---|---|
| Supplier Device Package | 8-PDFN (5x6) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|