TSM6502CR

Taiwan Semiconductor Corporation

TSM6502CR

Datasheet

Analog & Power

MOSFET N/P-CH 60V 24A/18A 8DFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Base Product NumberTSM6502
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1159pF @ 30V, 930pF @ 30V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C24A (Tc), 18A (Tc)
Power - Max40W

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)