TSM5055DCR

Name: TSM5055DCR
Brand: Taiwan Semiconductor Corporation

Analog & Power

MOSFET 2N-CH 30V 107A 8DFN

Active8-PowerTDFNAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
Base Product Number	TSM5055
Configuration	2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 10V, 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	555pF @ 15V, 2550pF @ 15V
Manufacturer	Taiwan Semiconductor Corporation
Mounting Type	Surface Mount
Product Status	Active
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA

Drain-to-Source Voltage	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
Power - Max	2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)

Operating Temperature	-55°C ~ 150°C (TJ)