Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1.25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 664 pF @ 25 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Surface Mount |
| Product Status | Discontinued at |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Drain-to-Source Voltage | 1000 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Max Power Dissipation | 99W (Tc) |
| Package | Cut Tape (CT) |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252, (D-Pak) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|