Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 30A TO251
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 34mOhm @ 15A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 30 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Through Hole |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Max Power Dissipation | 66W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | TO-251 (IPAK) |
| Operating Temperature | 150°C (TJ) |
|---|