TSM300NB06LDCR

Taiwan Semiconductor Corporation

TSM300NB06LDCR

Analog & Power

MOSFET 2N-CH 60V 5A/24A 8PDFNU

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 5A, 10V
Base Product NumberTSM300
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds966pF @ 30V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C5A (Ta), 24A (Tc)
Power - Max2W (Ta), 40W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-PDFNU (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)