Taiwan Semiconductor Corporation
MOSFET N-CH 60V 6A/27A 8PDFN
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 30 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 27A (Tc) |
| Max Power Dissipation | 3.1W (Ta), 56W (Tc) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerLDFN |
| Supplier Device Package | 8-PDFN (5.2x5.75) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
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