TSM2537CQ RFG

Taiwan Semiconductor Corporation

TSM2537CQ RFG

Datasheet

Analog & Power

MOSFET N/P-CH 20V 11.6A/9A 6TDFN

Active6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Base Product NumberTSM2537
ConfigurationN and P-Channel
FET FeatureLogic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs9.1nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds677pF @ 10V, 744pF @ 10V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C11.6A (Tc), 9A (Tc)
Power - Max6.25W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-TDFN (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)