Taiwan Semiconductor Corporation
MOSFET 2N-CH 60V 6A/29A 8DFN
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6A, 10V |
|---|---|
| Base Product Number | TSM250 |
| Configuration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1314pF @ 30V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-to-Source Voltage | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 29A (Tc) |
| Power - Max | 2W (Ta), 48W (Tc) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFN (5x6) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|