TSM250NB06DCR RLG

Taiwan Semiconductor Corporation

TSM250NB06DCR RLG

Datasheet

Analog & Power

MOSFET 2N-CH 60V 7A/30A 8DFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 7A, 10V
Base Product NumberTSM250
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1461pF @ 30V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 30A (Tc)
Power - Max2W (Ta), 48W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)