TSM250N02DCQ

Taiwan Semiconductor Corporation

TSM250N02DCQ

Datasheet

Analog & Power

MOSFET 2N-CH 20V 5.8A 6TDFN

Active6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 4A, 4.5V
Base Product NumberTSM250
Configuration2 N-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds775pF @ 10V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id0.8V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)
Power - Max620mW (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-TDFN (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)