TSM200N03DPQ33

Taiwan Semiconductor Corporation

TSM200N03DPQ33

Datasheet

Analog & Power

MOSFET 2N-CH 30V 20A 8DFN

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V
Base Product NumberTSM200
Configuration2 N-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs4.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds345pF @ 25V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Power - Max20W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-PDFN (3x3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)