TSM170N06PQ56

Taiwan Semiconductor Corporation

TSM170N06PQ56

Datasheet

Analog & Power

60V, 44A, SINGLE N-CHANNEL POWER

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17mOhm @ 8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1556 pF @ 30 V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 44A (Tc)
Max Power Dissipation2.6W (Ta), 73.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)