TSM160N10LCR

Taiwan Semiconductor Corporation

TSM160N10LCR

Datasheet

Analog & Power

100V, 46A, SINGLE N-CHANNEL POWE

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4431 pF @ 50 V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 46A (Tc)
Max Power Dissipation2.6W (Ta), 83W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)