TSM150P04LCS RLG

Taiwan Semiconductor Corporation

TSM150P04LCS RLG

Datasheet

Analog & Power

MOSFET P-CHANNEL 40V 22A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 9A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2783 pF @ 20 V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Max Power Dissipation12.5W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)