Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 800Ohm @ 16mA, 10V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 51.42 pF @ 25 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 8µA |
| Drain-to-Source Voltage | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 30mA (Tc) |
| Max Power Dissipation | 500mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|