Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1863 pF @ 50 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Through Hole |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Max Power Dissipation | 56.8W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package | ITO-220 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|