TSM076NH04DCR RLG

Taiwan Semiconductor Corporation

TSM076NH04DCR RLG

Datasheet

Analog & Power

MOSFET 2N-CH 40V 14A/34A 8PDFNU

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.6mOhm @ 17A, 10V
Base Product NumberTSM076N
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1217pF @ 25V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
SeriesPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.6V @ 250µA

Electrical

Drain-to-Source Voltage40V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 34A (Tc)
Power - Max55.6W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-PDFNU (5x6)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)