Taiwan Semiconductor Corporation
MOSFET N-CH 40V 21A/121A 8PDFN
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 21A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5022 pF @ 20 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 121A (Tc) |
| Max Power Dissipation | 3.1W (Ta), 107W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFN (5x6) |
| Operating Temperature | -55°C~175°C(TJ) |
|---|