TSM032NH04CR RLG

Taiwan Semiconductor Corporation

TSM032NH04CR RLG

Datasheet

Analog & Power

40V, 81A, SINGLE N-CHANNEL POWER

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.2mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2896 pF @ 25 V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 81A (Tc)
Max Power Dissipation115W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-PDFNU (5x6)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)