TSM025NB04LCR RLG

Taiwan Semiconductor Corporation

TSM025NB04LCR RLG

Datasheet

Analog & Power

MOSFET N-CH 40V 24A/161A 8PDFN

Active8-PowerLDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.5mOhm @ 24A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6435 pF @ 20 V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 161A (Tc)
Max Power Dissipation3.1W (Ta), 136W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerLDFN
Supplier Device Package8-PDFN (5.2x5.75)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)