Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1396 pF @ 30 V |
| Manufacturer | Taiwan Semiconductor Corporation |
| Mounting Type | Surface Mount, Wettable Flank |
| Product Status | Active |
| Series | Automotive, AEC-Q101 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 32A (Tc) |
| Max Power Dissipation | 3.1W (Ta), 68W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFNU (5x6) |
| Operating Temperature | -55°C~175°C(TJ) |
|---|