TQM056NH04CR RLG

Taiwan Semiconductor Corporation

TQM056NH04CR RLG

Datasheet

Analog & Power

40V, 54A, SINGLE N-CHANNEL POWER

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.6mOhm @ 27A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2912 pF @ 25 V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount, Wettable Flank
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 54A (Tc)
Max Power Dissipation78.9W (Tc)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101