RS1ALHMTG

Taiwan Semiconductor Corporation

RS1ALHMTG

Analog & Power

DIODE GEN PURP 50V 800MA SUB SMA

ActiveDO-219ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberRS1A
Capacitance @ Vr, F10pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusActive
Reverse Recovery Time (trr)150 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 800 mA
Current - Average Rectified (Io)800mA
Current - Reverse Leakage @ Vr5 µA @ 50 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

Package / CaseDO-219AB
Supplier Device PackageSub SMA

Environmental

GradeAutomotive
Operating Temperature - Junction-55°C ~ 150°C
QualificationAEC-Q101