HERF1007GAH

Taiwan Semiconductor Corporation

HERF1007GAH

Datasheet

Analog & Power

DIODE GEN PURP 800V 10A ITO220AB

ActiveTO-220-3 Full Pack, Isolated TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberHERF1007
Capacitance @ Vr, F40pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)80 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)800 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 5 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr10 µA @ 800 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageITO-220AB

Environmental

GradeAutomotive
Operating Temperature - Junction-55°C ~ 150°C
QualificationAEC-Q101