HERAF808G

Taiwan Semiconductor Corporation

HERAF808G

Datasheet

Analog & Power

DIODE GEN PURP 1KV 8A ITO220AC

ActiveTO-220-2 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberHERAF808
Capacitance @ Vr, F60pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)80 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr10 µA @ 1000 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTube
Package / CaseTO-220-2 Full Pack
Supplier Device PackageITO-220AC

Environmental

Operating Temperature - Junction-55°C ~ 150°C