GPA806

Taiwan Semiconductor Corporation

GPA806

Datasheet

Analog & Power

DIODE GEN PURP 800V 8A TO220AC

ActiveTO-220-2Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F50pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)800 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr5 µA @ 800 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

PackageTube
Package / CaseTO-220-2
Supplier Device PackageTO-220AC

Environmental

Operating Temperature - Junction-55°C ~ 150°C