ESH1JM RSG

Taiwan Semiconductor Corporation

ESH1JM RSG

Datasheet

Analog & Power

DIODE GEN PURP 600V 1A MICRO SMA

Obsolete2-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberESH1
Capacitance @ Vr, F3pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusObsolete
Reverse Recovery Time (trr)25 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr1 µA @ 600 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / Case2-SMD, Flat Lead
Supplier Device PackageMicro SMA

Environmental

Operating Temperature - Junction-55°C ~ 150°C