ES2BHM4G

Taiwan Semiconductor Corporation

ES2BHM4G

Datasheet

Analog & Power

DIODE GEN PURP 100V 2A DO214AA

DiscontinuedDO-214AA, SMBAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberES2B
Capacitance @ Vr, F25pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusDiscontinued at
Reverse Recovery Time (trr)35 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 2 A
Current - Average Rectified (Io)2A
Current - Reverse Leakage @ Vr10 µA @ 100 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)

Environmental

GradeAutomotive
Operating Temperature - Junction-55°C ~ 150°C
QualificationAEC-Q101