ES1BLH

Taiwan Semiconductor Corporation

ES1BLH

Datasheet

Analog & Power

DIODE GEN PURP 100V 1A SUB SMA

DiscontinuedDO-219ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberES1B
Capacitance @ Vr, F10pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusNot For New Designs
Reverse Recovery Time (trr)35 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5 µA @ 100 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseDO-219AB
Supplier Device PackageSub SMA

Environmental

GradeAutomotive
Operating Temperature - Junction-55°C ~ 150°C
QualificationAEC-Q101