BSS123W RFG

Taiwan Semiconductor Corporation

BSS123W RFG

Datasheet

Analog & Power

100V, 0.16A, SINGLE N-CHANNEL PO

ActiveSC-70, SOT-323Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5Ohm @ 160mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds30 pF @ 50 V
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C160mA (Ta)
Max Power Dissipation298mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

Environmental

Operating Temperature-55°C~150°C(TJ)