6A10GHB0G

Taiwan Semiconductor Corporation

6A10GHB0G

Datasheet

Analog & Power

DIODE GEN PURP 100V 6A R-6

ActiveR-6, AxialAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product Number6A10
Capacitance @ Vr, F60pF @ 4V, 1MHz
ManufacturerTaiwan Semiconductor Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 6 A
Current - Average Rectified (Io)6A
Current - Reverse Leakage @ Vr10 µA @ 100 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseR-6, Axial
Supplier Device PackageR-6

Environmental

GradeAutomotive
Operating Temperature - Junction-55°C ~ 150°C
QualificationAEC-Q101