STY80NM60N

STMicroelectronics

STY80NM60N

Analog & Power

MOSFET N-CH 600V 74A MAX247

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 37A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10100 pF @ 50 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusObsolete
SeriesMDmesh™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C74A (Tc)
Max Power Dissipation447W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageMAX247™

Environmental

Operating Temperature150°C (TJ)