STY60NM50

STMicroelectronics

STY60NM50

Datasheet

Analog & Power

MOSFET N-CH 500V 60A MAX247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Max Power Dissipation560W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageMAX247™

Environmental

Operating Temperature150°C(TJ)