STW72N60DM6AG

STMicroelectronics

STW72N60DM6AG

Analog & Power

DISCRETE

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs42mOhm @ 28A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4444 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4.75V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Max Power Dissipation390W (Tc)

Mechanical

PackageBulk

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101