STW68N65DM6-4AG

STMicroelectronics

STW68N65DM6-4AG

Datasheet

Analog & Power

MOSFET N-CH 650V 72A TO247-4

ActiveTO-247-4Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs39mOhm @ 36A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5900 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4.75V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Max Power Dissipation480W (Tc)

Mechanical

PackageTube
Supplier Device PackageTO-247-4

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101