STW68N60M6

STMicroelectronics

STW68N60M6

Datasheet

Analog & Power

MOSFET N-CH 600V TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs41mOhm @ 31.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4360 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesMDmesh™ M6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4.75V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Max Power Dissipation390W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)