STW60NE10

STMicroelectronics

STW60NE10

Analog & Power

MOSFET N-CH 100V 60A TO247-3

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
PackagingTube
Part StatusObsolete
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Max Power Dissipation180W (Tc)

Mechanical

Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature175°C (TJ)