STW38N65M5-4

STMicroelectronics

STW38N65M5-4

Datasheet

Analog & Power

MOSFET N-CH 650V 30A TO247-4L

ActiveTO-247-4Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesMDmesh™ M5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Max Power Dissipation190W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-4
Supplier Device PackageTO-247-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)