STW16N65M5

STMicroelectronics

STW16N65M5

Analog & Power

MOSFET N-CH 650V 12A TO247-3

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs279mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
PackagingTube
Part StatusObsolete
SeriesMDmesh™ V
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Max Power Dissipation90W (Tc)

Mechanical

Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature150°C (TJ)