STW11NM80

STMicroelectronics

STW11NM80

Datasheet

Analog & Power

MOSFET N-CH 800V 11A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs400mOhm @ 5.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1630 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-65°C ~ 150°C (TJ)